The invention belongs to the field of power amplifiers, and provides an equivalent inductance circuit of a class E power amplifier, and a device parameter acquisition method. The equivalent inductance circuit of the class E power amplifier comprises a high impedance line and a low impedance line. A first end of the high impedance line is connected with a transistor drain electrode. A second end of the high impedance line is connected with a first end of the low impedance line. A second end of the low impedance line is connected with a drain electrode direct current power supply. Through adoption of the equivalent inductance circuit of the class E power amplifier and the device parameter acquisition method, the class E power amplifier is applicable to microwave band of low frequency to the microwave band of high frequency.