The invention discloses a double Damascus integration technology method, comprising steps of, after forming a double-Damascus structure on a super low dielectric material layer through dry method etching, performing first plasma processing to enables super-low dielectric material of the side wall of the double Damascus structure to be modified to silica so as to prevent soup from infiltrating into micro holes of the super low dielectric material in the follow-up wet technology and prevent the affect of the soup on the double Damascus structure, performing second plasma processing after the wet technology to enable the silica on the side wall of the double-Damascus structure to be modified to a super low dielectric material, which prevents the media damage on the super low dielectric material caused by the wet technology, and fully utilizes the current vacuum cavity to realize technology integration.