The invention discloses a method for evaluating a transistor. The method comprises the following steps: applying a first pulse signal of which the cycle is T to the first end of the transistor; after at least n cycles, carrying out electric performance testing on the transistor to obtain a first parameter, wherein n is a positive integer which is greater than or equal to 1; and comparing an initial parameter of the transistor with the first parameter to evaluate the reliability of the transistor. According to the method, the reliability of the transistor can be rapidly evaluated; the process development cycle is shortened; and the reliability monitoring on each transistor wafer in the mass production process is realized.