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发明授权
CN105088159B 一种磁控溅射装置 失效 - 权利终止

一种磁控溅射装置
摘要：
本发明提供种磁控溅射装置,属于磁控溅射技术领域,其可解决现有的磁控溅射装置无法连续、均匀、任意比例掺杂元素的问题。本发明的磁控溅射装置,包括至少两个靶,分别用于放置向同基板的成膜区进行溅射的靶材;与每个靶分别对应的磁场产生装置,用于控制靶溅射的粒子的方向。本发明的磁控溅射装置包括至少两个靶,每个靶分别对应磁场产生装置,通过使用至少两个靶溅射,每个靶的靶材都是掺杂了不同的元素的透明导电氧化物,调整两种靶材的比例,实现均匀掺杂不同的元素的目的,通过控制磁场产生装置调节靶材的磁场,从而控制靶材的溅射速度,进而实现靶材任意比例掺杂的目的。本发明的磁控溅射装置适用于制备各种透明导电氧化物薄膜。
摘要（英）：

The present invention relates to a magnetron sputtering device, which comprises at least two targets, each of which is used for placing a target material for sputtering a film forming area of a same substrate; and magnetic field generating devices corresponding to the targets respectively and used for generating magnetic fields for controlling the directions of target sputtering particles. The magnetron sputtering device comprises at least two targets, and the target materials of the at least two targets are different from each other in composition, so that the purpose of doping different elements can be achieved by adjusting the proportion of the two target materials; by controlling the magnetic fields generated by the magnetic field generating devices, the sputtering speed and direction of the target materials can be controlled. The present invention also relates to a method for forming a film on a substrate by magnetron sputtering.

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