The present invention discloses a method of reducing the white pixels of a CMOS image sensor by C ion implantation. In allusion to the problem that the white pixels of the conventional CMOS image sensor are more, and by an ion implantation technology, the C ions of a certain concentration are implanted in a P+ type isolation region around a photodiode, and by a high temperature annealing process, the aggregation of the C ions to the oxygen in the P+ type isolation region and the adsorption of the oxygen precipitation formed by the oxygen aggregation to the metal ion pollution in the photodiode are promoted, thereby being able to reduce the white pixels of the CMOS image sensor effectively.