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发明公开
CN105336672A 半导体结构及其形成方法 无效 - 驳回

半导体结构及其形成方法
摘要：
一种半导体结构及其形成方法，形成方法包括：提供衬底，衬底具有相对的第一表面和第二表面；在衬底内形成第一插塞，第一插塞具有第一端和第二端，第一插塞的第一端与衬底的第一表面齐平，第一插塞的第二端位于衬底内，第一插塞的长度为第一尺寸；在形成第一插塞之后，对衬底的第二表面进行减薄，直至衬底的厚度为第二尺寸，第二尺寸大于第一尺寸；在对衬底的第二表面进行减薄之后，在衬底内形成第二插塞，第二插塞位于第一插塞的第二端表面，且第二插塞的顶部与衬底的第二表面齐平，第一插塞和第二插塞形成导电插塞，导电插塞贯穿衬底。所形成的半导体结构的可靠性和稳定性。
摘要（英）：

The invention discloses a semiconductor structure and a formation method therefor. The formation method comprises the steps that a substrate is provided, wherein the substrate is provided with a first surface and a second surface that are opposite; a first plug is formed in the substrate, wherein the first plug is provided with a first end and a second end; the first end of the first plug is flush with the first surface of the substrate; the second end of the first plug is positioned in the substrate; the length of the first plug is a first size; the second surface of the substrate is thinned after the first plug is formed until the thickness of the substrate is a second size, wherein the second size is larger than the first size; a second plug is formed in the substrate after the second surface of the substrate is thinned, wherein the second plug is positioned in the surface of the second end of the first plug; the top of the second plug is flush with the second surface of the substrate; a conductive plug is formed by the first plug and the second plug; and the conductive plug penetrates through the substrate. The reliability and the stability of the semiconductor structure are improved.

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