The invention discloses a planetary rotary device for epitaxial growth of silicon carbide. The device comprises a base, a central rotary shaft and a planetary disc, wherein the central rotary shaft is arranged on the base; the planetary disc is mounted on the central rotary shaft and can rotate along the central rotary shaft; a plurality of workpiece support plates are distributed at the periphery of the planetary disc; air inlet orifices for communicating with the peripheries of the workpiece support plates and driving the workpiece support plates to rotate after ventilation are formed on the base, the central rotary shaft and the planetary disc. The device has the advantages of being simple in structure, low in cost and easy to mould, and the rotary stability and continuity can be greatly improved.