This film-forming composition contains a fluorine resin and a fluorine-based solvent, said fluorine resin containing a repeat unit that can be represented by general formula (1). (Each R1 independently represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, and each R2 independently represents a C1-15 straight-chain fluorine-containing hydrocarbon group or a C3-15 branched or cyclic fluorine-containing hydrocarbon group. Fluorine atoms may be substituted in for hydrogen atoms in said hydrocarbon groups, and each repeat unit contains at least one fluorine atom.). This composition is useful for a method for manufacturing an organic semiconductor element, as said composition is capable of forming a film on top of an organic semiconductor film, and when using photolithography or the like to form a detailed organic-semiconductor pattern, said composition is resistant to etching solvents.