The invention discloses an electrostatic protection circuit, which comprises an NMOS transistor and a PMOS transistor, wherein a source and a grid of the NMOS transistor are connected to a first connection end; a drain of the NMOS transistor is connected to a second connection end; the source and the grid of the PMOS transistor are connected to a second connection end; a lining body end of the PMOS transistor is connected with the source; and the drain of the PMOS transistor is connected with the lining body end of the NMOS transistor. Compared with the prior art, the electrostatic protection circuit disclosed by the invention triggers conduction of a parasitic NPN of the NMOS transistor through a breakdown voltage of the PMOS transistor, so that a trigger voltage of the electrostatic protection circuit is lowered; and the ESD protection performance is improved.