利索-全球专利检索

  1. 登录
  2. 注册
发明授权
CN105428401B 一种碳纳米管薄膜晶体管及其制备方法 有权

一种碳纳米管薄膜晶体管及其制备方法
摘要：
本发明涉及一种碳纳米管薄膜晶体管，包括衬底，设置于衬底上的栅极，设置于栅极表面的有机绝缘层，设置于所述有机绝缘层上的半导体层，设置于所述半导体层上的源极和漏极，所述半导体层为依次设置的聚3-己基噻吩层和碳纳米管聚3-己基噻吩混合层，所述聚3-己基噻吩层设置于绝缘层与碳纳米管聚3-己基噻吩混合层之间。本发明的碳纳米管聚3-己基噻吩混合层中的半导体性碳纳米管的含量较高，基本避免了含有金属性碳纳米管，保证了薄膜晶体管的电学性能。而且，所述碳纳米管聚3-己基噻吩混合层与所述聚3-己基噻吩层通过π-π键连接，形成碳纳米管薄膜晶体管的半导体层立体通道，从而使制得的碳纳米管薄膜晶体管具有了较高的电学性能。
摘要（英）：

A carbon nanotube thin film transistor and a manufacturing method thereof are provided in the embodiments of the present disclosure. The carbon nanotube thin film transistor includes: a base substrate; a gate electrode, a semiconductor layer, a source electrode and a drain electrode, which are disposed on the base substrate, the semiconductor layer includes a poly(3-hexylthiophene) layer and a mixing layer of semiconducting carbon nanotube and poly(3-hexylthiophene) which are stacked. The semiconducting carbon nanotube thin film transistor has a high purity, thus the metallic carbon nanotubes are substantially cleared out and the electrical property of the thin film transistor is ensured, so that the manufactured carbon nanotube thin film transistor has good electrical properties.

公开/授权文献
0/0