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发明公开
CN105448862A 半导体结构及其制作方法 有权

半导体结构及其制作方法
摘要：
一种半导体结构及其制作方法，其中半导体结构的制作方法包括：提供第一晶圆以及第二晶圆，第一晶圆内形成有第一金属层，第二晶圆内形成有第二金属层；在第一晶圆表面形成第一材料层；在第二晶圆表面形成第二材料层；对所述第一晶圆与第二晶圆进行对准处理以及键合处理，使第一材料层与第二材料层对准且表面相接触；在进行键合处理后，对所述第一材料层以及第二材料层进行加热处理，使第一材料层以及第二材料层相互熔融，提高第一金属层与第二金属层之间的对准精度。本发明利用第一材料层以及第二材料层相互熔融产生的表面张力，使第一材料层和第二材料层相互拉近，从而提高第一金属层和第二金属层之间的对准精度，减小键合偏移。
摘要（英）：

The present invention provides a semiconductor structure and a manufacture method thereof. The manufacture method of the semiconductor structure comprises: providing a first wafer and a second wafer, the first wafer being provided with a first metal layer, the second layer being provided with a second metal layer; forming a first material layer at the surface of the first wafer; forming a second material layer at the surface of the second wafer; performing alignment processing and bonding processing of the first wafer and the second wafer to align the first material layer with the second material layer and contact the surface of the first material layer with the surface of the second material layer; performing heat processing of the first material layer and the second material after the bonding processing to mutually fuse the first material layer and the second layer so that the alignment precision between the first metal layer and the second layer is improved. The surface tension generated by mutually fusing the first material layer and the second material layer is employed to get close the first material layer to the second material layer, so that the alignment precision between the first metal layer and the second layer is improved and the bonding offset is decreased.

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