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发明公开
CN105486721A 一种基于氧化钨纳米块的氮氧化物传感器元件的制备方法 无效 - 撤回

一种基于氧化钨纳米块的氮氧化物传感器元件的制备方法
摘要：
本发明公开了一种基于氧化钨纳米块的氮氧化物传感器元件的制备方法，具有以下步骤：(1)陶瓷片基底的清洗；(2)制备Pt的叉指电极；(3)制备反应溶液；(4)制备气敏传感器；(5)清洗反应后氧化铝基底；(6)气敏传感器元件的热处理。本发明采用溶剂热法在陶瓷片基底上制备了三氧化钨纳米块结构，其具有巨大的比表面积和较大的表面活性，并将该纳米块结构应用于气敏传感器领域，结果表明：该三氧化钨纳米块气敏材料能在低温(～100℃)条件下有效检测氮氧化物，并具有很高的气敏性、优良的重复性和很好的稳定性。
摘要（英）：

The invention discloses a method for preparing a nitrogen oxide sensor element based on tungsten oxide nanometer blocks. The method comprises the steps of 1, cleaning a ceramic wafer substrate; 2, preparing a Pt interdigital electrode; 3, preparing a reaction solution; 4, preparing an air-sensitive sensor; 5, cleaning an aluminum oxide substrate obtained after reaction; 6, conducting heat treatment on the air-sensitive sensor element. A tungsten trioxide nanometer block structure is prepared on the ceramic wafer substrate with the solvothermal method, and has a huge specific surface area and high surface activity. After the nanometer block structure is applied to the field of air-sensitive sensors, results show that nitrogen oxide can be effectively detected by the tungsten trioxide nanometer block air-sensitive material at low temperatures around 100 DEG C, air sensitivity is high, repeatability is excellent, and stability is high.

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