Provided is an evaluation device that can conveniently measure and predict/estimate the mobility and stress resistance of an oxide semiconductor thin film by means of a single, non-contact-type and accurate device. The evaluation device of the present invention comprises, with regard to a measurement region of a sample, a first excitation-light radiating means that radiates first excitation light and generates electron-hole pairs, an electromagnetic wave radiating means that radiates electromagnetic waves, a reflected-electromagnetic-wave intensity detecting means that detects the intensity of reflected electromagnetic waves, a second excitation-light radiating means that radiates second excitation light toward the sample and generates photoluminescent light, an emitted-light intensity measuring means that measures the emitted-light intensity of the photolumuniscent light, and an evaluation means that evaluates mobility and stress resistance. Additionally, the first excitation-light radiating means and the second excitation-light radiating means are the same or different excitation-light radiating means.