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CN105551980B 半导体装置的制法 失效 - 权利终止

半导体装置的制法
摘要：
提供半导体装置的制法，其为不会降低成型性及固化性、高温高湿可靠性优异的半导体装置的制法，使用含下述(A)～(D)成分的半导体密封用环氧树脂组合物对半导体元件树脂密封，在树脂密封后施加加热处理工序，此加热处理在下述(x)所示条件下进行。(A)下述通式(1)所示的环氧树脂。上述式(1)中，X为单键、‑CH2‑、‑S‑或‑O‑，R1～R4为‑H或‑CH3且相互可相同也可不同，(B)酚醛树脂。(C)胺系固化促进剂。(D)无机质填充剂。(x)由热处理时间(t分钟)与热处理温度(T℃)的关系满足t≥3.3×10‑5exp(2871/T)的区域构成的热处理条件，其中，185℃≤热处理温度T℃≤300℃。
摘要（英）：

A method of manufacturing a semiconductor device which is excellent in high-temperature high-humidity reliability without decreasing moldability and curability is provided. The method includes sealing a semiconductor element in resin using a semiconductor-sealing epoxy resin composition; and then performing a heating treatment. The semiconductor-sealing epoxy resin composition contains (A) an epoxy resin of formula (1): wherein X is a single bond, —CH2—, —S— or —O—; and R1 to R4, which may be the same as or different, are each —H or —CH3, (B) a phenolic resin, (C) an amine-based curing accelerator, and (D) an inorganic filler. The heating treatment is performed under heat treatment conditions defined by a region in which a relationship t≧3.3×10−5 exp(2871/T) is satisfied where t is heat treatment time in minutes and T is heat treatment temperature in ° C. and where 185≦̸T≦̸300.

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