The invention relates to an InP groove corrosion method. The InP groove corrosion method comprises the following steps of S1, providing an InGaAs-InP-InGaAs device structure, wherein the InGaAs-InP-InGaAs device structure comprises a first InGaAs layer arranged at a surface layer, an InP layer arranged at an intermediate layer and a second InGaAs layer arranged at a bottom layer; S2, growing SiO2 on the surface of the InGaAs layer to form a SiO2 layer, carrying out photoresist coating, and carrying out pattern photoetching on the middle part coated with photoresist; S3, etching the grown SiO2 layer at a pattern photoetching position of the photoresist, and removing the photoresist on a part which is not etched on the SiO2 layer; S4, corroding the middle parts of the first InGaAs layer and the InP layer to form a bowl-shaped groove; S5, continuously corroding the InP layer, wherein the second InGaAs layer is not corroded any longer, and the section of the groove formed in the InP layer is of an isosceles trapezoid; and S6, removing the SiO2 after corrosion is completed. The InP groove corrosion method is implemented by wet etching, and groove morphology control is achieved by changing different proportions of chemical reagents in a process condition.