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CN105585317B 一种锡酸镉靶材及其制备方法 有权 转让

一种锡酸镉靶材及其制备方法
摘要：
本发明涉及一种锡酸镉靶材及其制备方法，属于陶瓷靶材技术领域。该锡酸镉靶材的组成为Cd2SnO4和CdSnO3，其中Cd2SnO4的含量大于95w％。本发明以SnO2粉和CdO粉为原料粉制成的Cd2SnO4单相粉体为原料，采用热压烧结工艺，不添加任何添加剂，并且在热压工艺中采用两段式温度，进行低温真空烧结，高温氩气保护烧结，制得致密的锡酸镉陶瓷靶材。该靶材中Cd2SnO4含量大于95w％，相对密度达到80～95％，电阻率达到1～6×10‑4Ω·cm。
摘要（英）：

The invention relates to a cadmium stannate target material and a preparation method thereof, which belong to the technical field of a ceramic target material. The cadmium stannate target material is composed of Cd2SnO4 and CdSnO3, wherein the content of the Cd2SnO4 is greater than 95w%. The method takes Cd2SnO4 single-phase powder prepared by raw material powder of SnO2 powder and CdO powder as a raw material, a hot-pressure sintering process is employed, no additive is added, the hot-pressure technology employs two-segment-type temperature, low temperature vacuum sintering is carried out, and high temperature Ar protected sintering is performed to prepare the compact cadmium stannate target material. The content of Cd2SnO4 in the target material is greater than 95w%, relative density can reach 80-95%, and electrical resistivity can reach 1-6*10<-4>omega.cm.

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