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发明授权
CN105628673B 测试复合硅衬底上过渡金属硫族化合物样品层数的方法 失效 - 权利终止

测试复合硅衬底上过渡金属硫族化合物样品层数的方法
摘要：
本发明公开了一种测试复合硅衬底上超薄过渡金属硫族化合物样品层数的方法，包括如下步骤：测试复合硅衬底表面SiO2层的厚度hSiO2；在复合硅衬底上制备超薄过渡金属硫族化合物样品；测量I2D(Si)和I0(Si)的强度比值的实际值；计算激强度比值的理论值；将所述强度比值的实际值与所述强度比值的理论值进行比较，可确定所测超薄过渡金属硫族化合物样品的层数。本发明提出的测试方法简单，不依赖于复合硅衬底的取向和入射激光的偏振状态，适用于10层以内过渡金属硫族化合物样品的层数表征。
摘要（英）：

The invention discloses a method for testing the number of layers of a transition metal chalcogenide sample on a composite silicon substrate. The method comprises the following steps: testing the thickness hSiO2 of a SiO2 layer on the surface of the composite silicon substrate; preparing the ultra-thin transition metal chalcogenide sample on the composite silicon substrate; measuring an actual value of a strength ratio of I2D (Si) to IO (Si); calculating a theoretical value of an excitation intensity ratio; comparing the actual value of the strength ratio with the theoretical value of the strength ratio so as to determine the number of the layers of the ultra-thin transition metal chalcogenide sample. The method disclosed by the invention is simple, does not depend on the orientation of the composite silicon substrate and a polarization state of incident laser and is suitable for the characterization of the number of the layers of the transition metal chalcogenide sample within 10 layers.

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