The invention provides a gallium arsenide-based low-brightness yellow light-emitting diode chip and a manufacturing method thereof, and belongs to the technical field of photoelectrons. An antireflection layer is arranged between a GaAs buffer layer and an n-type carrier limiting layer in a manufacturing process; and meanwhile, a p-type reflective absorbing layer is arranged between two p-type carrier limiting layers. A low-brightness yellow LED epitaxial wafer with a low-brightness yellow LED epitaxial structure is prepared from a GaAs substrate by metal organic compound vapor deposition equipment (MOCVD); and then the epitaxial wafer is processed into the independent LED chip through a chip technology. The gallium arsenide-based low-brightness yellow light-emitting diode chip lowers the quaternary yellow LED normal luminous intensity under the premise of not lowering the reliability or changing the external dimension of the LED chip, so that expansion of the application range of an AlGaInP quaternary LED chip is facilitated.