Provided is a light emitting device. The light emitting device includes a light emitting structure layer (135) including a first conductive type semiconductor layer (110), a second conductive type semiconductor layer (130), and an active layer (120) between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode (115) electrically connected to the first conductive type semiconductor layer, an insulating support member (190) under the light emitting structure layer, and a plurality of conductive layers (150,160,170,180) between the light emitting structure layer and the insulating support member. At least one of the plurality of conductive layers has a width greater than that of the light emitting structure layer and includes a contact part (150A) disposed further outward from a sidewall of the light emitting structure layer.