The invention provides a superspeed simulation unidirectional silicon controlled rectifier and a manufacturing method thereof. The superspeed simulation unidirectional silicon controlled rectifier comprises triodes V1-V2, resistors R1-R4 and diodes VD1-VD5, wherein the lower end of the resistor R1 is connected with the emitter electrode of the triode V2 to form the cathode K of the simulation silicon controlled rectifier, the upper end of the resistor R2 is connected with the emitter electrode of the triode V1 to form the anode A of the simulation silicon controlled rectifier, the base electrode of the triode V1 is both connected with the lower end of the resistor R2 and the anode of the diode VD1, the cathode of the diode VD1 is connected with the anode of the diode VD2, the collector of the triode V1 is both connected with the anode of the diode VD4 and the anode of the diode VD3, the cathode of the diode VD2 and the cathode of the diode VD3 are connected with the collector of the triode V2, the cathode of the diode VD4 and the anode of the diode VD5 are connected with the upper end of the resistor R1, the cathode of the diode VD5 is connected with the left end of the resistor R3, the right end of the resistor R3 and the right end of the resistor R4 are connected with the base electrode of the triode V2, and the left end of the resistor R4 forms the trigger electrode G of the simulation silicon controlled rectifier and serves as the high frequency pulse signal input end. The switching on/off speed of the superspeed simulation unidirectional silicon controlled rectifier is two orders of magnitude faster than a common silicon controlled rectifier.