利索-全球专利检索

  1. 登录
  2. 注册
发明公开
CN105727933A 一种钨酸铋-钼酸铋异质结光催化材料及其制备方法和应用 无效 - 驳回

  • 专利标题： 一种钨酸铋-钼酸铋异质结光催化材料及其制备方法和应用
  • 专利标题（英）： Bismuth tungstate-bismuth molybdate heterojunction photocatalytic material, method for preparing same and application of bismuth tungstate-bismuth molybdate heterojunction photocatalytic material
  • 申请号： CN201610149021.9
    申请日： 2016-03-16
  • 公开(公告)号： CN105727933A
    公开(公告)日： 2016-07-06
  • 发明人: 闫云辉 , 李向荣 , 倪天军 , 刘林霞 , 杨振华
  • 申请人： 新乡医学院
  • 申请人地址： 河南省新乡市红旗区新延路
  • 专利权人： 新乡医学院
  • 当前专利权人： 新乡医学院
  • 当前专利权人地址： 河南省新乡市红旗区新延路
  • 代理机构： 北京汉昊知识产权代理事务所
  • 代理商 冯谱
  • 主分类号： B01J23/31
  • IPC分类号： B01J23/31 ;  C02F1/30 ;  C02F101/38
一种钨酸铋-钼酸铋异质结光催化材料及其制备方法和应用
摘要：
本发明公开了一种钨酸铋?钼酸铋异质结光催化材料及其制备方法和应用。首先利用Bi(NO3)3·5H2O和Na2WO4·2H2O为原料，通过水热合成Bi2WO6；然后在Bi2WO6表面沉积Bi2MoO6，160℃下恒温水热反应12小时，得到Bi2WO6?Bi2MoO6异质结光催化剂。制备过程工艺简单、适宜规模化生产；该材料能在可见光下催化降解有色染料罗丹明B和无色抗生素甲硝唑，具有普适性。Bi2MoO6均匀分散在Bi2WO6表面，二者的界面接触良好，有利于光生载流子在两种半导体间的运输和分离，有效抑制了光生电子?空穴对的复合，从而提高了复合半导体催化剂的催化活性。
摘要（英）：

The invention discloses a bismuth tungstate-bismuth molybdate heterojunction photocatalytic material, a method for preparing the same and application of the bismuth tungstate-bismuth molybdate heterojunction photocatalytic material.The method includes carrying out hydrothermal synthesis on Bi(NO3) 3 5H2O and Na2WO4 2H2O to obtain Bi2WO6; depositing Bi2MoO6 on the surfaces of the Bi2WO6 and carrying out hydrothermal reaction at the constant temperature of 160 DEG C for 12 hours to obtain a BI2WO6-Bi2MoO6 heterojunction photocatalyst.The bismuth tungstate-bismuth molybdate heterojunction photocatalytic material, the method and the application have the advantages that processes in preparation procedures are simple, and accordingly the bismuth tungstate-bismuth molybdate heterojunction photocatalytic material and the method are suitable for large-scale production; colored dye rhodamine and colorless antibiotic metronidazole can be catalytically degraded by the bismuth tungstate-bismuth molybdate heterojunction photocatalytic materials in visible light, and accordingly the bismuth tungstate-bismuth molybdate heterojunction photocatalytic material is universal; the Bi2MoO6 is uniformly dispersed on the surfaces of the Bi2WO6, interfaces of the Bi2MoO6 and the Bi2WO6 are in excellent contact with one another, the bismuth tungstate-bismuth molybdate heterojunction photocatalytic material is favorable for transporting photo-induced carriers between two semiconductors and separating the photo-induced carriers from one another between the two semiconductors, recombination of photo-induced electron-hole pairs can be effectively inhibited, and accordingly the photocatalytic activity of the composite semiconductor catalyst can be improved.

0/0