The invention discloses a high-quality silicon carbide crystal growth method. The method adopts a silicon carbide raw material positioned at a high-temperature zone, seed crystal positioned in a zone with temperature lower than that of the raw material, and a layer of high-temperature-resistant carbide powder with stable chemical property and coated on the raw material. Compared with a conventional vapor transport silicon carbide crystal growth method, the method provided by the invention is innovative in that the layer of high-temperature-resistant carbide powder with stable chemical property is added on the surface of the silicon carbide raw material. With the layer of high-temperature-resistant carbide powder with stable chemical property, inclusion defects in the crystal can be substantially reduced, and high-quality silicon carbide crystals can be obtained. Therefore, the yield of silicon carbide crystal growth is improved.