The invention discloses a giant-piezoresistance dual-resonance mass sensor and a making method thereof. The giant-piezoresistance dual-resonance mass sensor comprises sensor chips and an external circuit, and is characterized in that the sensor chips comprise two resonance-type sensor chips connected via a fine nano rod and a temperature compensation device chip; the resonance-type sensor chip comprises a sensitive structure of the resonance-type sensor, a silicon bottom layer, an insulated silicon dioxide layer, a silicon top layer, an aluminum top layer, an excitation electrode, an excitation electrode leading-out end electrode and a detection electrode; the silicon bottom layer, the insulated silicon dioxide layer and the silicon top layer are arranged sequentially from bottom to top; and the aluminum top layer and the silicon top layer are located on the same layer. The surface of a single crystal silicon nano resonance film is processed via a modification process, residual stress is left, and the strain coefficient is about 2 to 3 orders of magnitude higher compared with that of the traditional silicon piezoresistance-type resonance film. In addition, in order to eliminate influences on the piezoresistance value by the temperature, a temperature compensation device is introduced, and the measurement resolution and the measurement sensitivity are greatly improved.