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发明公开
CN105780107A 提高碳化硅晶体生长质量的籽晶处理方法以及用于碳化硅晶体生长的方法 无效 - 驳回

提高碳化硅晶体生长质量的籽晶处理方法以及用于碳化硅晶体生长的方法
摘要：
本发明公开了提高碳化硅晶体生长质量的籽晶处理方法以及用于碳化硅晶体生长的方法。所述提高碳化硅晶体生长质量的籽晶处理方法包括下列步骤：1)在用于碳化硅晶体生长的籽晶的生长面的背面镀上高温薄膜；以及2)将通过步骤(1)得到的镀膜籽晶在高温下退火。所述用于碳化硅晶体生长的方法包括将镀膜籽晶以镀膜面朝向坩埚盖的底部的方式固定在坩埚盖上，并且通过物理气相传输法进行碳化硅晶体生长。根据本发明，通过在用于碳化硅晶体生长的籽晶的生长面的背面镀上一层致密的耐高温薄膜，可以抑制碳化硅晶体生长过程中的背向蒸发，减少平面六方空洞等缺陷，从而提高碳化硅晶体生长质量。
摘要（英）：

The invention discloses a seed crystal processing method for improving the growth quality of silicon carbide crystals, and a method for growing the silicon carbide crystals. The seed crystal processing method for improving the growth quality of silicon carbide crystals comprises the following steps: 1, coating the back of the growth surface of the seed crystals used for growing the silicon carbide crystals with a high temperature film; and 2, annealing coated seed crystals obtained in step 1 at a high temperature. The method for growing the silicon carbide crystals comprises the following steps: fixing the coated seed crystals on a crucible cover in a mode that the coating surface faces the bottom of the crucible cover, and growing the silicon carbide crystals through a physical gas phase transmission technology. The methods allow the back of the growth surface of the seed crystals used for growing the silicon carbide crystals is coated with the compact high temperature resisting film in order to inhibit backward evaporation in the growth process of the silicon carbide crystals and reduce planar hexagonal cavities and other defects, so the growth quality of the silicon carbide crystals is improved.

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