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发明公开
CN105788864A 一种提高PZT铁电薄膜负电容的方法 有权

一种提高PZT铁电薄膜负电容的方法
摘要：
本发明公开了一种提高PZT铁电薄膜负电容的方法。本发明包括以下步骤：①前驱体溶液的配置：配置不同锆钛比的Pb(Zr1?xTix) O3溶液；②用溶胶?凝胶法制得PZT铁电薄膜电容器；③对PZT铁电薄膜电容器进行电学性能分析。本发明通过分析锆钛比对PZT铁电薄膜电容器电学性能的影响，得到提高PZT铁电薄膜负电容的最佳比率。本发明提出了一种提高PZT铁电薄膜负电容的有效方法，对低电压、低功耗MOS结构场效应晶体管的设计具有非常重要的指导意义。
摘要（英）：

The invention discloses a method for improving a negative capacitance of a PZT ferroelectric thin film. The method comprises the following steps: (1) preparing a precursor solution, namely preparing a Pb(Zr<1-x>Ti)O<3> solution with different zirconium-titanium ratios; (2) preparing a PZT ferroelectric thin film capacitor by a sol-gel method; and (3) carrying out electrical property analysis on the PZT ferroelectric thin film capacitor. The optimal ratio of the negative capacitance of the PZT ferroelectric thin film is improved by analyzing the influences of the zirconium-titanium ratios on the electrical properties of the PZT ferroelectric thin film capacitor. The effective method for improving the negative capacitance of the PZT ferroelectric thin film provided by the invention has very important guiding significance in design of an MOS structure field effect transistor with low voltage and low power consumption.

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