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发明授权
CN105789388B 提高外延晶体质量的LED生长方法 有权

提高外延晶体质量的LED生长方法
摘要：
本申请公开提高外延晶体质量的LED生长方法，依次包括：处理衬底、生长N型GaN层、周期性生长有缘层、生长P型AlGaN层、生长P型GaN层，降温冷却。处理衬底进一步为：利用直流磁控反应溅射设备将蓝宝石衬底温度加热到650℃左右，通入50sccm‑70sccm的Ar、80sccm‑100sccm的N2、2sccm‑3sccm的O2，用2000V‑3000V的偏压冲击铝靶在蓝宝石衬底表面上溅射A1N薄膜；将溅射好A1N薄膜的蓝宝石衬底放入反应腔，升高温度至900℃‑1000℃，反应腔压力300mbar‑400mbar，通入H2、NH3、TMGa源以及TMIn，持续生长InxGa(1‑x)N层。
摘要（英）：

The invention discloses an LED growth method capable of improving the quality of an epitaxial crystal. The method sequentially comprises steps of substrate treatment, N-type GaN layer growth, active layer periodic growth, P-type AlGaN layer growth, P-type GaN layer growth, and temperature reduction and cooling. The step of substrate treatment further comprises sub steps: a DC reactive magnetron sputtering device is used for heating the temperature of the sapphire substrate to about 650 DEG C, 50 sccm to 70 sccm of Ar, 80 sccm to 100 sccm of N2 and 2 sccm to 3 sccm of O2 are piped in, and a 2000 V to 3000 V bias impact aluminum target is used for sputtering an AlN thin film on the surface of the sapphire substrate; and the sapphire substrate after the AlN thin film is sputtered is put in a reaction chamber, the temperature rises to 900 to 1000 DEG C, the reaction chamber has a pressure of 300 to 400 mbar, H2, NH3, a TMGa source and TMIn are piped in, and continuous growth is carried out on an InxGa(1-x)N layer.

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