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CN105839151B 一种用于铜互连的HDI板电镀铜浴的均镀剂及电镀铜浴 失效 - 权利终止

一种用于铜互连的HDI板电镀铜浴的均镀剂及电镀铜浴
摘要：
本发明属于印制电路板电镀技术领域，涉及一种微盲孔填孔镀铜工艺，具体提供一种用于铜互连的HDI板电镀铜浴及电镀铜浴，所述均镀剂，包含按质量百分比计的以下原料：0.001‑0.5％的三唑‑噁二唑类化合物、0.01％‑1％的季胺化合物、余量为水，所述季胺化合物的分子量为200‑10000，分子表达式为：HO[CH(CH3)CH2O]x‑(CH2CH2O)y‑[CH(CH3)CH2O]xH。所述电镀铜浴，包含：60～220g/L的铜离子，30～100g/L的H2SO4，20～80mg/L的氯离子，0.5‑20mL/L的加速剂，5‑100mL/L的均镀剂，余量为水。本发明能够在盲孔填孔镀铜过程中有效地控制面铜生长速率、以及加速盲孔底部沉铜速率，从而有效降低HDI铜互连制作的成本，提升生产效率。
摘要（英）：

The invention belongs to the technical field of printed circuit board electroplating, relates to a micro blind hole filling and copper plating technology, and particularly provides an even-plating agent of a copper electroplating bath of an HDI board used for copper interconnection and the copper electroplating bath. The even-plating agent is prepared from, by mass percent, 0.001-0.5% of a triazole-oxadiazole compound, 0.01-1% of a quaternary ammonium compound and the balance water; and the molecular weight of the quaternary ammonium compound ranges from 200 to 10000, and the molecular expression of the quaternary ammonium compound is HO[CH(CH3)CH2O]x(CH2CH2O)y[CH(CH3)CH2O]xH. The copper electroplating bath contains 60-220 g/L of copper ions, 30-100g/L of H2SO4, 20-80 mg/L of chlorine ions, 0.5-20 mL/L of an accelerating agent, 5-100 mL/L of the even-plating agent and the balance water. The even-plating agent of the copper electroplating bath of the HDI board used for copper interconnection and the copper electroplating bath can effectively control the surface copper growing rate and increase the copper deposition rate at the bottom of a blind hole in the blind hole filling and copper plating process, and therefore the HDI copper interconnection manufacturing cost is effectively reduced, and the production efficiency is improved.

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