The embodiments of the invention disclose a modification indium tin oxide anode. The modification indium tin oxide anode comprises an indium tin oxide anode and a modification layer. The indium tin oxide anode comprises a glass substrate and an indium tin oxide film arranged on the surface of the glass substrate. The modification layer is arranged on the surface of the indium tin oxide film. The modification layer is a fluorine containing dipole layer existing in an In-F form, which is formed through bonding of the indium on the surface of the indium tin oxide film and fluorine. The mass percentage of the fluorine element of the fluorine containing dipole layer is 19%-23%. The ratio of the mass percentage of a tin element to the mass percentage of an indium element is 0.006-0.014. The existence of the fluorine containing dipole layer enables the work content of the surface of the anode to be improved. Besides, the embodiments of the invention further disclose a preparation method of the modification indium tin oxide anode, and an organic electroluminescent device using the modification indium tin oxide anode.