The invention discloses a gallium nitride growth method based on black phosphorus and magnetron sputtering aluminum nitride. The method is mainly used for improving the quality of gallium nitride material. The growth step is as follows: (1) preparing a black phosphorous transition layer; (2) a magnetron sputtering aluminum nitride transition layer; (3) thermally treating; (4) growing an aluminum nitride buffer layer; (5) growing a low V-III ratio gallium nitride layer; (6) growing a high V-III ratio gallium nitride layer. The gallium nitride film disclosed by the invention has the advantages that the black phosphorus and magnetron sputtering aluminum nitride are combined, the material is excellent in quality, the applicable substrate range is large, and the gallium nitride film can be used for manufacturing high-performance gallium nitride-based device.