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发明公开
CN105960703A 用于结合基体的方法及装置 有权

用于结合基体的方法及装置
摘要：
本发明涉及用于将第一基体（35）的第一接触面（35k）与第二基体（36）的第二接触面（36k）结合的方法和相对应的装置，具有下列步骤、尤其下列流程：将由所述第一基体（35）及所述第二基体（36）形成的、在接触面（35k、36k）处对准的基体堆（14）布置在第一加热设备（30）的第一加热面（15）与第二加热设备（26）的第二加热面（19）之间，其中，e）所述第一加热面（15）布置成面向所述第一基体（35）的与所述第一接触面（35k）背离的第一表面（35o），f）所述第二加热面（19）布置成面向所述第二基体（36）的与所述第二接触面（36k）背离的第二表面（36o），g）在所述第一表面（35o）与所述第一加热面（15）之间存在>0µm的间距A，及h）在所述第二表面（36o）与所述第二加热面（19）之间存在＞0µm的间距B，加热加热面（15、19）且通过将间距A及B减小至0µm使得所述基体堆（14）接近加热面（15、19），通过在表面（35o、36o）处压力加载所述基体堆（14）使得在所述第一接触面（35k）与第二接触面（36k）之间构造出结合。
摘要（英）：

The present invention relates to a method and a corresponding device for bonding a first contact face (35k) of a first substrate (35) to a second contact face (36k) of a second substrate (36), comprising the following steps, in particular in the following order: - arranging a substrate stack (14), which is formed of the first substrate (35) and the second substrate (36) and is oriented on the contact faces (35k, 36k), between a first heating face (15) of a first heating device (30) and a second heating face (19) of a second heating device (26), wherein e) the first heating face (15) is arranged facing toward a first surface (35o) of the first substrate (35), which first surface faces away from the first contact face (35k), f) the second heating face (19) is arranged facing toward a second surface (36o) of the second substrate (36), which second surface faces away from the second contact face (36k), g) a distance A > 0 microns exists between the first surface (35o) and the first heating face (15), and h) a distance B > 0 microns exists between the second surface (36o) and the second heating face (19), heating the heating faces (15, 19) and moving the substrate stack (14) closer to the heating faces (15, 19) by reducing the distances A and B to 0 microns, forming a bond between the first contact face (35k) and the second contact face (36k) by applying pressure to the substrate stack (14) at the surfaces (35o, 36o).

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