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发明授权
CN105977252B 半导体装置 有权

半导体装置
摘要：
提供了半导体装置，所述半导体装置包括：基底；第一晶体管，由第一输入信号的反向的电压电平门控以上拉第一节点；第二晶体管，由第二输入信号的电压电平门控以下拉第一节点；第三晶体管，由第二输入信号的反向的电压电平门控以上拉第一节点；第四晶体管，由第一输入信号的电压电平门控以下拉第一节点；第五晶体管，由第二输入信号的电压电平门控以下拉第二节点；第六晶体管，由第一输入信号的反向的电压电平门控以上拉第二节点；第七晶体管，由第一输入信号的电压电平门控以下拉第二节点；以及第八晶体管，由第二输入信号的反向的电压电平门控以上拉第二节点。
摘要（英）：

A semiconductor device includes a substrate, a first transistor gated by an inverted voltage level of a first input signal to pull up a first node, a second transistor gated by a voltage level of a second input signal to pull down the first node, a third transistor gated by an inverted voltage level of the second input signal to pull up the first node, a fourth transistor gated by a voltage level of the first input signal to pull down the first node, a fifth transistor gated by the voltage level of the second input signal to pull down a second node, a sixth transistor gated by the inverted voltage level of the first input signal to pull up the second node, a seventh transistor gated by the voltage level of the first input signal to pull down the second node, and an eighth transistor gated by the inverted voltage level of the second input signal to pull up the second node.

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