利索-全球专利检索

  1. 登录
  2. 注册
发明公开
CN105986320A Sc,Ce共掺杂的硅酸镥、硅酸钇镥晶体及其熔体法生长方法 无效 - 驳回

Sc,Ce共掺杂的硅酸镥、硅酸钇镥晶体及其熔体法生长方法
摘要：
本发明公开了Sc,Ce共掺杂的硅酸镥、硅酸钇镥晶体及其熔体法生长方法，分子式为Sc2xCe2yLu2(1-x-y)SiO5和Sc2xCe2yY2zLu2(1-x-y-z)SiO5。对于Sc2xCe2yLu2(1-x-y)SiO5，将Sc2O3、CeO2、Lu2O3、SiO2按比例配制并充分混合好后，压制成形，高温烧结后，用作晶体生长初始原料；对于Sc2xCe2yY2zLu2(1-x-y-z)SiO5，将Sc2O3、CeO2、Y2O3、Lu2O3、SiO2按比例配制并充分混合好后，压制成形，高温烧结后，用作晶体生长初始原料；将生长初始原料加热熔化后，用提拉法、坩埚下降法进行生长，获闪烁体单晶。
摘要（英）：

The invention discloses Sc/Ce-codoped lutetium silicate and lutetium yttrium silicate crystals and a melt-process growth method thereof. The molecular formulae are Sc[2x]Ce[2y]Lu2[(1-x-y)]SiO[5] and Sc[2x]Ce[2y]Y[2z]Lu[2(1-x-y-z)]SiO[5]. The melt-process growth method comprises the following steps: as for the Sc[2x]Ce[2y]Lu2[(1-x-y)]SiO[5], proportionally preparing Sc2O3, CeO2, Lu2O3 and SiO2, sufficiently mixing, carrying out press forming, and carrying out high-temperature sintering to obtain a crystal growth initial raw material; or as for the Sc[2x]Ce[2y]Y[2z]Lu[2(1-x-y-z)]SiO[5], proportionally preparing Sc2O3, CeO2, Y2O3, Lu2O3 and SiO2, sufficiently mixing, carrying out press forming, and carrying out high-temperature sintering to obtain a crystal growth initial raw material; and heating to melt the growth initial raw material, and growing by a dip coating process or crucible descent process to obtain the scintillator monocrystals.

0/0