The present invention provides a mask blank including: a transparent substrate, a half-transparent layer for controlling a phase and a transmittance of the exposure light, formed on the transparent substrate, a middle layer formed on the half-transparent layer, and a light-shielding layer formed on the middle layer, wherein the light-shielding layer is constituted with a single metal material not including a transition metal; a film thickness of the light-shielding layer is 40 nm or less; and an optical density of a laminated body, in which three kinds of layers: the half-transparent layer, the middle layer, and the light-shielding layer are laminated, with respect to the exposure light is a value to the extent that the laminated body functions as a light-shielding region or more; the mask blank is used for producing a half tone type phase shift mask, and suitable for a lithography technique on a wafer from 40 nm half pitch and on for its high light-shielding property even thinning the light-shielding pattern film, capability of decreasing the value of EMF bias, and excellency in pattern processability, light-shielding property and chemical resistance.