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发明授权
CN106206862B 半导体发光器件 有权

半导体发光器件
摘要：
本发明提供了一种半导体发光器件，该半导体发光器件包括：发光结构，其包括分别提供发光结构的彼此面对的第一表面和第二表面的第一导电类型的半导体层和第二导电类型的半导体层以及介于第一导电类型的半导体层与第二导电类型的半导体层之间的有源层，第一导电类型的半导体层的一个区朝着第二表面敞开，并且第一表面具有布置于其上的凹凸部分；第一电极和第二电极，它们分别布置在第一导电类型的半导体层的所述一个区和第二导电类型的半导体层的一个区中；透明支承衬底，其布置在第一表面上；以及透明粘合剂层，其布置在发光结构的第一表面与透明支承衬底之间。
摘要（英）：

A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively providing a first surface and a second surface, opposite to each other, of the light emitting structure, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a region of the first conductivity-type semiconductor layer being open toward the second surface, and the first surface having a concavo-convex portion disposed thereon; a first electrode and a second electrode disposed on the region of the first conductivity-type semiconductor layer and a region of the second conductivity-type semiconductor layer, respectively; a transparent support substrate disposed on the first surface of the light emitting structure; and a transparent adhesive layer disposed between the first surface of the light emitting structure and the transparent support substrate.

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