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发明授权
CN106229389B 一种在金属氮化镓复合衬底上制备发光二极管的方法 有权

一种在金属氮化镓复合衬底上制备发光二极管的方法
摘要：
一种在金属氮化镓复合衬底上制备发光二极管的方法，包括以下步骤，首先在N2气氛，820‑850℃，反应室压力300torr下,在金属GaN复合衬底上外延厚度为200纳米的低温n型GaN应力释放层，然后在N2气氛、750‑850℃下，生长多周期的InxGa1‑xN/GaN多量子阱有源区；接着在H2气氛、850‑95℃下，生长p型Aly1Inx1Ga1‑y1‑x1N电子阻挡层，然后在H2气氛、950‑1050℃下，生长高温p型GaN层；接着再在H2气氛、650‑750℃下生长p型InGaN接触层，退火处理制备得到高亮度金属氮化镓复合衬底发光二极管。本发明提高了金属氮化镓复合衬底发光二极管发光效率。
摘要（英）：

Provided is a method for preparing a light emitting diode on a metal gallium nitride composite substrate. The method includes following steps: firstly, growing a low-temperature n-type GaN stress release layer with the thickness of 200 nm on the metal GaN composite substrate under the reaction chamber pressure of 300 torr at the temperature of 820-850 DEG C in the N<2> atmosphere in an epitaxial manner, and growing a multi-period InGa<1-x>N/GaN multi-quantum well active region at the temperature of 750-850 DEG C in the N<2> atmosphere; secondly, growing a p-type AlInGa<1-y1-x1> electron blocking layer at the temperature of 850-950 DEG C in the H<2> atmosphere, and then growing a high-temperature p-type GaN layer at the temperature of 950-1050 DEG C in the H<2> atmosphere; and then growing a p-type InGaN contact layer at the temperature of 650-750 DEG C in the H<2> atmosphere, and preparing the high-brightness light emitting diode on the metal gallium nitride composite substrate by annealing treatment. According to the method, the light-emitting efficiency of the light emitting diode on the metal gallium nitride composite substrate is improved.

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