Disclosed is a method for forming a bump for a semiconductor device, said method including: a bonding step wherein a leading end of a wire extending from a leading end of a bonding tool is bonded to a first point X1; a wire feeding step wherein the bonding tool is moved in the direction to be away from the first point X1; a thin section forming step wherein a part of the wire is pressed by means of the bonding tool at a second point X2 on a reference surface, and a thin section (64) is formed as a part of the wire; a wire shaping step wherein the wire bonded to the first point X1 is shaped such that the wire stands from the reference surface; and a bump forming step wherein the wire is cut from the thin section, and a bump (60) having a shape standing from the reference surface is formed at the first point X1. Consequently, the bump having a desired height can be more easily and efficiently formed.