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发明授权
CN106268900B 一种g-C3N4量子点敏化AgVO3纳米线的制备方法 失效 - 权利终止

一种g-C3N4量子点敏化AgVO3纳米线的制备方法
摘要：
本发明属于一种g‑C3N4量子点敏化AgVO3纳米线的制备方法。制备方法包括以下步骤：1）g‑C3N4量子点的制备，2）AgVO3纳米线的制备，3）g‑C3N4敏化AgVO3纳米线量子点的制备。本申请所述方法简单易行、操作方便、成本较低、可重复性高、产物的可见光催化活性高，在复合纳米材料的制备和应用领域有着广阔的发展前景。
摘要（英）：

The invention belongs to a method for preparing a g-C3N4 quantum dot sensitization AgVO3 nanowire. The preparation method comprises a step 1) of preparing a g-C3N4 quantum dot; a step 2) of preparing an AgVO3 nanowire; and a step 3) of preparing a g-C3N4 sensitization AgVO3 nanowire quantum dot. The method is simple, practical, convenient to operate, low in cost and high in repeatability, the visible light photocatalytic activity of the product is high, and the method has wide development prospect in the fields of composite nanomaterial preparation and application.

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