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发明授权
CN106298642B 布线结构及其形成方法和包括该布线结构的半导体器件 有权

布线结构及其形成方法和包括该布线结构的半导体器件
摘要：
本发明公开了布线结构及其形成方法和包括该布线结构的半导体器件。在形成布线结构的方法中，形成具有第一开口的第一掩模，第一开口包括沿着第二方向延伸的第一部分和沿着第一方向延伸的第二部分。设计包括与第一开口的第一部分重叠的第二开口和各自与第一开口的第二部分重叠的第三开口的第二掩模。将第二掩模制造为包括通过扩大第二开口获得的第四开口。第四开口与第一开口的第一部分与第二部分之间的边界重叠。利用第一掩模和第二掩模蚀刻绝缘夹层，以形成对应于第四开口和第三开口的第一导通孔和第二导通孔以及对应于第一开口的沟槽。第一过孔和第二过孔以及布线被形成为填充第一导通孔和第二导通孔以及沟槽。
摘要（英）：

In a method of forming a wiring structure, a first mask having a first opening including a first portion extending in a second direction and a second portion extending in a first direction is formed. A second mask including a second opening overlapping the first portion of the first opening and third openings each overlapping the second portion of the first opening is designed. The second mask is fabricated to include a fourth opening by enlarging the second opening. The fourth opening overlaps a boundary between the first and second portions of the first opening. An insulating interlayer is etched using the first and second masks to form first and second via holes corresponding to the fourth and third openings, and a trench corresponding to the first opening. First and second vias and a wiring are formed to fill the first and second via holes and the trench.

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