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发明授权
CN106298993B 铟砷锑和铟镓砷锑双波段红外探测器及制备方法 有权

铟砷锑和铟镓砷锑双波段红外探测器及制备方法
摘要：
本发明提供一种铟砷锑和铟镓砷锑双波段红外探测器及制备方法，所述铟砷锑和铟镓砷锑双波段红外探测器结构，包括：一GaSb衬底；一第一GaSb缓冲层，其生长在GaSb衬底上；一InGaAsSb PIN型短波器件，其生长在第一GaSb缓冲层上；一第二GaSb缓冲层，其生长在InGaAsSb PIN型短波器件上；一InAsSb NIP型中波器件，其生长在第二GaSb缓冲层上。本发明可以实现对红外中波波段及短波波段的信号探测。
摘要（英）：

The invention provides an indium arsenide antimony and indium gallium arsenide antimony two-waveband infrared detector and a manufacturing method thereof. The indium arsenide antimony and indium gallium arsenide antimony two-waveband infrared detector structurally comprises a GaSb substrate, a first GaSb buffer layer grown on the GaSb substrate, an InGaAsSb PIN type short-wave device grown on the first GaSb buffer layer, a second GaSb buffer layer grown on the InGaAsSb PIN type short-wave device and an InAsSb NIP type middle-wave device grown on the second GaSb buffer layer. The indium arsenide antimony and indium gallium arsenide antimony two-waveband infrared detector can realize signal detection on an infrared middle-wave waveband and a short-wave waveband.

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