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发明公开
CN106328184A MLC STT-MRAM数据写入方法及装置、数据读取方法及装置 失效 - 权利终止

MLC STT-MRAM数据写入方法及装置、数据读取方法及装置
摘要：
本发明公开了一种MLC STT-MRAM数据写入方法及装置、数据读取方法及装置，其中，MLC STT-MRAM数据写入方法，包括将新数据从缓存器传输至MLC STT-MRAM的写队列中等待写入；通过比较新旧数据，获得写入MLC STT-MRAM时的每种数据状态改变单元格硬区域磁化状态的数量以及相应的映射类型；筛选出需要改变MLC STT-MRAM硬区域磁化状态数量最少的映射类型为重映射方式，并利用重映射方式对新数据进行数值重映射；根据相应写策略，将重映射后得到的数据和映射类型一起写入MLC STT-MRAM中。
摘要（英）：

The invention discloses a method and device for writing MLC STT-MRAM data, and a method and device for reading the data, wherein the method for writing the MLC STT-MRAM data comprises the steps that new data is transmitted to the write queue of MLC STT-MRAM from a buffer to wait for a write; the number of changing the magnetization state of the cell hard region by each data state when the MLC STT-MRAM is written and the corresponding mapping type are obtained through comparison of the new data and the old data; the mapping type that the number of the changes required by the magnetization state of the MLC STT-MRAM hard region is minimum is selected to serve as a remapping mode, and the remapping mode is used for numerically remapping the new data; according to a corresponding write strategy, the obtained data and mapping type after remapping is written to the MLC STT-MRAM together.

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