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Invention Publication
CN106458605A 硅材料和二次电池的负极 有权

硅材料和二次电池的负极
Abstract:
本发明提供一种作为负极活性物质有用的硅材料。该硅材料的带隙在大于1.1eV且为1.7eV以下的范围。使用该硅材料作为负极活性物质的二次电池的初期效率提高。
Abstract(English):

Provided is a silicon material useful as a negative electrode active substance. A silicon material having a band gap greater than 1.1 V and equal to or less than 1.7 eV. A secondary cell which uses this silicon material as a negative electrode active substance has enhanced initial efficiency.

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