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发明公开
CN106463495A 半导体装置用接合线 有权 转让

半导体装置用接合线
摘要：
提供一种接合线，该接合线是在表面具有Pd被覆层的Cu接合线，改善了在高温高湿环境中的球接合部的接合可靠性，适合于车载用装置。一种半导体装置用接合线，具有Cu合金芯材、和形成于所述Cu合金芯材的表面的Pd被覆层，接合线包含合计为0.011～1.2质量％的Ga和/或Ge。由此，能够提高在高温高湿环境下的球接合部的接合寿命，改善接合可靠性。Pd被覆层的厚度优选为0.015～0.150μm。当接合线还含有分别为0.011～1.2质量％的Ni、Ir、Pt中的1种以上时，能够提高在175℃以上的高温环境中的球接合部可靠性。另外，当在Pd被覆层的表面进一步形成包含Au和Pd的合金表皮层时，楔接合性改善。
摘要（英）：

There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature, high-humidity environment and is suitable for on-vehicle devices. The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, and the bonding wire contains Ga and Ge of 0.011 to 1.2 pcnt by mass in total. With this configuration, it is ablwe to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.0150 um. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2 pcnt by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175C or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

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