The invention discloses a high-speed digital switch based on a bipolar-type semiconductor triode. The high-speed digital switch comprises a main switch circuit and a resistor. The main switch circuit comprises a first bipolar-type semiconductor triode, and a silicon switch diode connected between the collector and the emission electrode of the first bipolar-type semiconductor triode. The high-speed digital switch also comprises a control signal level converting circuit connected to the main switch circuit. The control signal level converting circuit comprises a second bipolar-type semiconductor triode and an adjusting resistor connected to the base electrode of the second bipolar-type semiconductor triode. The bipolar-type semiconductor triodes are used for controlling the on-off processes of the main switch circuit, so control requirements on a control signal and a to-be-controlled signal with different amplitude are achieved; control cost is reduced; occupation area of a PCB is reduced; utilization flexibility and applicability are remarkably improved; and the high-speed digital switch is especially suitable for communication control on an IC card port of an intelligent ammeter.