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发明授权
CN106489210B 半导体装置 有权

半导体装置
摘要：
进一步实现二极管元件的反向恢复耐量的提高。具备：第一导电型的漂移层(1)；第二导电型的阳极区(3)，其设置于漂移层(1)的上部；第二导电型的抽出区(4)，其设置于包围阳极区(3)的位置，且与阳极区(3)接触；以及第二导电型的场限环区(6j)，其设置于漂移层(1)的上部的包围抽出区(4)的位置，且与抽出区(4)相离，其中，抽出区(4)构成为比阳极区(3)和场限环区(6j)深。
摘要（英）：

Provided is a device with improved reverse-recovery immunity of a diode element. The device includes: a first conductivity-type drift layer; a second conductivity-type anode region provided in an upper portion of the drift layer; a second conductivity-type extraction region in contact with and surrounding the anode region; and a second conductivity-type field limiting ring region surrounding and separated from the extraction region at the upper portion of the drift layer, wherein the extraction region has a greater depth than the anode region and the field limiting ring region.

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