The invention provides a vacuum film plating method and relates to a preparation technology for a diamond-like film and a metal film. The vacuum film plating method comprises the following steps that firstly, a laser is used for cutting or sculpturing a conductive wafer (1), and through holes (2) are formed in the conductive wafer (1); secondly, a target material wafer (3), the conductive wafer (1) and a substrate wafer (4) are sequentially stacked and put in vacuum to be heated until the temperature becomes stable; and thirdly, voltage is exerted onto the target material wafer (3) and the substrate wafer (4), the target material wafer (3) is connected with the positive electrode, the substrate wafer (4) is connected with the negative electrode, and under the action of the voltage, the substrate wafer (4) is plated with a target material film (8). According to the vacuum film plating method, the area, needing to be plated with the diamond-like film or the metal film, on the substrate wafer can be precisely controlled, and the diamond-like film or the metal film with the size being a millimeter level or even a submillimeter level can be prepared.