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发明公开
CN106521415A 一种改良的氧化铟透明导电薄膜退火方法 失效 - 权利终止

一种改良的氧化铟透明导电薄膜退火方法
摘要：
本发明公开了一种改良的氧化铟透明导电薄膜退火方法，包括在气体氛围下对氧化铟透明导电薄膜进行退火处理，所述的气体氛围选自高纯氢气、水蒸气、氮气氢气混合气、一氧化碳、水蒸气空气混合气中的一种或多种。在使用本方法进行退火处理后，氧化铟透明导电薄膜的电阻率得到较大降低，且其在300~1200nm波段的透射率得到明显提高。
摘要（英）：

The invention discloses a modified transparent conductive indium oxide film annealing method. The modified transparent conductive indium oxide film annealing method comprises the step that a transparent conductive indium oxide film is annealed in a gas atmosphere which is selected from one or more of high purity hydrogen, steam, nitrogen and hydrogen mixed gas, carbonic oxide, and steam and air mixed gas. After the transparent conductive indium oxide film is annealed through the modified transparent conductive indium oxide film annealing method, the resistivity of the transparent conductive indium oxide film is greatly decreased, and the transmittivity of the transparent conductive indium oxide film in a 300-1200 nm wave band is obviously increased.

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