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发明授权
CN106574900B 晶片的缺陷测量装置 有权

晶片的缺陷测量装置
摘要：
本发明涉及一种用于测量晶片缺陷的装置，该装置能够同时测量晶片的上表面、下表面和侧表面上的缺陷，而同时防止损坏晶片。本发明提供一种用于测量晶片缺陷的装置，该装置包括：下鼓风机，通过将空气喷射到晶片的下表面来缓冲晶片；上鼓风机，设置为能够相对于下鼓风机上下移动，并且通过将空气喷射到晶片的上表面来使晶片固定；上污染测量件，设置在上鼓风机的上侧，并且检测晶片的上表面上的污染；下污染测量件，设置在下鼓风机的下侧，并且检测晶片的下表面上的污染；以及侧污染测量件，设置在上鼓风机与下鼓风机之间，并且检测晶片的侧表面上的污染。
摘要（英）：

The device for measuring wafer defects includes a lower blower configured to inject air to a lower surface of a wafer to float the wafer; an upper blower provided to be moved up and down with respect to the lower blower and configured to inject the air to an upper surface of the wafer to fix the wafer; an upper contamination measuring part provided at an upper side of the upper blower and configured to detect contamination on the upper surface of the wafer; a lower contamination measuring part provided at a lower side of the lower blower and configured to detect contamination on the lower surface of the wafer; and a side contamination measuring part provided between the upper and lower blowers and configured to detect contamination on a side surface of the wafer.

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