The invention provides a complementary field effect transistor and a production method thereof. The complementary field effect transistor comprises a semiconductor substrate; an N-type field effect transistor and a P-type field effect transistor, which are disposed in the semiconductor substrate, and are isolated from each other. The N-type field effect transistor comprises a first germanium nanowire; a first III-V compound layer disposed on the periphery of the first germanium nanowire in an encircled manner; a first barrier layer, a first gate dielectric layer, and a first gate electrode, which are disposed on the first III-V compound layer; a first source region and a first drain region, which are respectively disposed on the two sides of the first gate electrode. The P-type field effect transistor comprises a second germanium nanowire; a second III-V compound layer disposed on the periphery of the second germanium nanowire in an encircled manner; a second barrier layer, a second gate dielectric layer, and a second gate electrode, which are disposed on the second III-V compound layer; a second source region and a second drain region, which are respectively disposed on the two sides of the second gate electrode. The complementary field effect transistor is used to form two-dimensional electron gas and two-dimensional hole gas, and is a gate-all-around device, and in addition, carrier mobility is high.