The invention relates to the technical field of semiconductor glaze, and in particular relates to a high-voltage porcelain insulating semiconductor glaze. The semiconductor glaze is prepared from the following components in parts by weight: 25-35 parts of high-potassium and low-iron feldspar, 8-14 parts of mud, 4-10 parts of Dongsheng soil, 1-4 parts of calcined talc, 20-30 parts of quartz powder, 2-4 parts of barium carbonate, 12-18 parts of iron oxide red, 1-3 parts of chrome oxide green, 9-12 parts of titanium dioxide and 1-2 parts of spodumene. The semiconductor glaze is high in structure stability, fine in surface and glossy in surface, the eutectic point is reduced, and the melting efficiency is improved; and meanwhile, the combining capacity of the semiconductor glaze after being glazed is improved by adopting the Dongsheng soil and mud.