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发明公开
CN106664085A 绝缘栅型功率半导体元件的栅极驱动电路 有权

绝缘栅型功率半导体元件的栅极驱动电路
摘要：
防止绝缘栅型功率半导体元件的稳态损耗加剧。栅极驱动电路(2)具有：NchMOSFET(4)，其使所述绝缘栅型功率半导体元件(1)导通；PchMOSFET(5)，其使所述绝缘栅型功率半导体元件(1)截止；控制电路(6)，其通过将正电压(8b)施加于所述NchMOSFET(4)的栅电极而使所述NchMOSFET(4)导通，通过将负电压(9)施加于所述PchMOSFET(5)的栅电极而使所述PchMOSFET(5)导通；以及电源体(7)，其将负电压(9)施加于所述PchMOSFET(5)的漏电极和所述控制电路(6)的负侧电极，将正电压(8a)施加于所述NchMOSFET(4)的漏电极，将绝对值比施加于所述NchMOSFET(4)的漏电极的正电压(8a)的绝对值大的正电压(8b)施加于所述控制电路(6)的正侧电极。
摘要（英）：

The purpose of the present invention is to prevent the worsening of stationary loss in an insulated gate-type power semiconductor element. A gate driving circuit (2) comprises: an NchMOSFET (4) that turns an insulated gate-type power semiconductor element (1) ON; a PchMOSFET (5) that turns the insulated gate-type power semiconductor element (1) OFF; a control circuit (6) that turns the NchMOSFET (4) ON by imparting a positive voltage (8b) to the gate electrode of the NchMOSFET (4), and that turns the PchMOSFET (5) ON by imparting a negative voltage (9) to the gate electrode of the PchMOSFET (5); and a power supply body (7) that imparts the negative voltage (9) to the drain electrode of the PchMOSFET (5) and the negative-side electrode of the control circuit (6), imparts a positive voltage (8a) to the drain electrode of the NchMOSFET (4), and imparts the positive voltage (8b) to the positive-side electrode of the control circuit (6), such positive voltage having a greater absolute value than the absolute value of the positive voltage (8a) which is imparted to the drain electrode of the NchMOSFET (4).

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